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| savantic semiconductor product specification silicon npn power transistors BU931Z d escription with to-3 package darlington high breakdown voltage applications application in high performance electronic car ignition pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 350 v v ceo collector-emitter voltage open base 350 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a i b base current 5 a p t total power dissipation t c =25 175 w t j max.operating junction temperature 200 t stg storage temperature -40~200 thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1.0 /w fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BU931Z charact eristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cl clamping voltage i c =0.1 a ;i b =0 350 500 v v ce (sat-1) collector-emitter saturation voltage i c =7a ;i b =70ma 1.6 v v ce (sat-2) collector-emitter saturation voltage i c =8a; i b =100m a 1.8 v v ce (sat-3) collector-emitter saturation voltage i c =10a; i b =150m a 2.0 v v be (sat-1) base-emitter saturation voltage i c =8a; i b =100m a 2.2 v v be (sat-2) base-emitter saturation voltage i c =10a; i b =250m a 2.5 v v be-1 base-emitter on voltage i c =5a ; v ce =2v 1.67 v v be-2 base-emitter on voltage i c =10a ; v ce =2v 2.0 v i cl clamping current v ce =350v ; i b =0 0.25 ma i ce( off ) collector-emitter off state current v cc =16v ; v be =300mv t j =125 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 50 ma h fe dc current gain i c =5a ; v ce =2v 300 v f diode forward voltage i f =10a 2.5 v downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BU931Z package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:/// |
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